Step-related growth phenomena on exact and misoriented (OOl> surfaces of CVD-grown single-crystal diamonds
نویسندگان
چکیده
This study gives an overview of growth phenomena observed on {OOl} homoepitaxial diamond films grown by hot-filamentassisted CVD and acetylene-oxygen flame deposition. The main emphasis lies on the nucleation and propagation of steps, which form a key to understanding the growth on the (2 x I) reconstructed (001) faces.
منابع مشابه
Single-crystal CVD diamonds as small-angle X-ray scattering windows for high-pressure research.
Small-angle X-ray scattering (SAXS) was performed on single-crystal chemical vapor deposition (CVD) diamonds with low nitrogen concentrations, which were fabricated by microwave plasma-assisted chemical vapor deposition at high growth rates. High optical quality undoped 500 µm-thick single-crystal CVD diamonds grown without intentional nitrogen addition proved to be excellent as windows on SAXS...
متن کاملInvestigations of new samples of single-crystal CVD-diamond detectors
Single-crystal CVD diamond (scCVDD) for detector applications is grown on best quality HPHT single-crystal diamond substrates of (100) crystallographic orientation, because the incorporation of stacking faults or the creation of twin crystals is hereby more suppressed than, e.g., in the (111) growth direction. Any imperfection of the substrate may hand over in the CVD diamond film either as iso...
متن کاملInfrared spectroscopy of chromium film growth on single-crystal diamond
Single crystal diamonds are very favourable as detector material for several reasons [1]. Exact knowledge about the crystal surface is essential in order to control the electronic properties of the diamond. Another decesive and so far non-standardised step towards satisfying detector performance is the fabrication of electrodes. Therefore we study as first part of our research regarding the met...
متن کاملTransferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets
Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, t...
متن کاملNumerical Analysis of Inlet Gas-Mixture Flow Rate Effects on Carbon Nanotube Growth Rate
The growth rate and uniformity of Carbon Nano Tubes (CNTs) based on Chemical Vapor Deposition (CVD) technique is investigated by using a numerical model. In this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as carrier gas enters into a horizontal CVD reactor at atmospheric pressure. Based on the gas phase and surface reactions, released carbon...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016